Last Chance Gaas - Growing Method: Vgf (100) Si Doped, N-type, 2" Dia X 0.35mm, 2sp Deluxe Edition [8z2ptDNG]

High-Quality GaAs Single Crystal Wafers

Introducing our premium GaAs single crystal wafers, meticulously crafted to meet the highest standards of quality and performance. These wafers are designed for advanced semiconductor applications, offering exceptional reliability and durability. With their exceptional growth method, size, and polishing, these wafers are ideal for various electronic devices and systems.

Key Product Features and Specifications

Our GaAs single crystal wafers are grown using the Vertical Gradient Freeze (VGF) method, ensuring a uniform and high-quality crystal structure. These wafers have a diameter of 2 inches and a thickness of 0.35 mm, making them suitable for a wide range of applications. They are polished on both sides for a smooth and even surface finish. Key specifications include Si doping for enhanced electrical conductivity, N-type conductivity type, and a carrier concentration ranging from 1.60 to 3.94 E18 /cm^3. The mobility of these wafers is between 1400 and 2100 cm^2/V.S, and their resistivity ranges from 1.08 to 1.90 E-3 ohm.cm. Additionally, these wafers have an Epitaxy Prepared (EPI) ready surface and are packaged to ensure optimal protection during transportation and handling.

Applications and Benefits

Our GaAs single crystal wafers are versatile and find applications in various industries, including telecommunications, aerospace, and automotive. Their high thermal conductivity and excellent electrical properties make them ideal for use in power amplifiers, frequency converters, and optoelectronic devices. By choosing our GaAs wafers, you can benefit from increased efficiency, reduced power consumption, and improved overall performance of your electronic systems. These wafers are suitable for both research and development purposes and mass production, making them a reliable choice for professionals and hobbyists alike.