Original 2" Dia. Ingaas Epi Film On Inp (si) (100) Depositied By Mocvd ( Inp:fe) 2" Dia X0.35mm,2sp,film:750 Nm Black Friday Exclusive [VYoZmszU]

2" Dia. InGaAs EPI Film on InP (SI) (100) by MOCVD

Our premium InGaAs EPI Film is meticulously crafted using Metal Organic Chemical Vapor Deposition (MOCVD) on a 2" diameter, 0.35mm thick InP (Semi-Insulating) wafer with a (100) orientation. This state-of-the-art film features a lattice-matched In/Ga alloy layer, ensuring optimal performance and compatibility. The EPI Film boasts a thickness of 750 nm, with a roughness close to 1 mono-layer (ML), ensuring high quality and consistency.

• High-performance InGaAs EPI Film
• Deposited by MOCVD for superior quality

Technical Specifications and Properties

This InGaAs EPI Film offers exceptional properties, making it ideal for a wide range of applications. The film features an N-type InGaAs layer, doped with Fe, providing semi-insulating characteristics. The wafer is polished on both sides, ensuring a smooth surface. Key specifications include a film thickness of 0.75 um (+/- 20%) and a resistivity ranging from 1.6E-1 to 4.5E-1 ohm-cm. The film's carrier concentration and mobility are also optimized for superior performance.

• Lattice-matched In/Ga alloy layer for optimal performance
• High carrier concentration and mobility for improved efficiency

Applications and Benefits

The 2" Dia. InGaAs EPI Film on InP (SI) (100) by MOCVD is perfect for various applications, including optical communication, infrared detection, and photovoltaic devices. This film's exceptional quality and performance make it a reliable choice for high-end electronics and optoelectronic devices. Its precision deposition and superior properties ensure optimal performance and reliability, making it an excellent choice for professionals in the field.

• Ideal for optical communication and infrared detection
• Enhanced efficiency and reliability for high-end devices