Hard To Find Insb (100) 2" Dia X 0.45 Mm, P Type, Ge Doped, 1 Sided Polished, Carrier Conc: (0.5-5.0)x10^17/cc - Isgea50d045c1us Guaranteed [JW0Ytx53]

InSb (100) 2" dia x 0.45 mm, P type, Ge doped, 1-sided polished

This product offers a premium choice for high-performance infrared applications. With its exceptional features, it stands out as an ideal solution for various demanding applications. The 2" InSb wafer features a diameter of 2 inches and a thickness of 0.45 mm, ensuring optimal performance and durability. The P type and Ge doping contribute to its excellent conductivity and stability, making it a preferred choice for infrared detectors and sensors.

Product Properties and Specifications

Our InSb wafer is meticulously crafted with LEC growth method for superior quality. It boasts a carrier concentration of (0.5-5.0)x10^17/cc at 77K, ensuring high sensitivity and fast response time. The wafer features a mobility of > (4.0-8.4)x10^3 cm^2/Vs, guaranteeing exceptional performance under varying conditions. With an EPD of < 200 / cm^2, it delivers excellent signal-to-noise ratio, making it an excellent choice for high-end infrared systems. The one-sided polished finish ensures a smooth and uniform surface for better adhesion and processing.

Practical Applications and Benefits

Our InSb wafer is versatile and suitable for a wide range of applications in the infrared technology field. It finds extensive use in thermal imaging systems, security cameras, and remote sensing devices. The high sensitivity and fast response time make it ideal for detecting heat sources and capturing images in low-light conditions. By using this wafer, you can enjoy the following benefits:

• Improved image quality in thermal imaging applications
• Enhanced security and surveillance capabilities in security cameras
• Accurate environmental monitoring in remote sensing systems

Whether you are a professional in the field or a hobbyist, our InSb wafer is an essential tool for achieving top-notch performance in your projects.