Ultimate Insb (100) 2" Dia X 0.45 Mm, Te Doped, N Type, 1 Side Polished - Istea50d045c1us With A 40% Price Cut [8WnOptuk]

InSb (100) Wafer - High-Purity and Doped N-Type

Introducing the InSb (Indium Antimonide) wafer with a diameter of 2 inches and a thickness of 0.45 mm. This wafer is Te doped, ensuring a high level of purity and enhanced performance. The wafer is of N-type conductivity, making it suitable for various applications in the semiconductor industry. The one-side polished finish provides a smooth and even surface for further processing.

Key Features and Specifications

Features:

• Size: 2" dia x 0.45 (+/- 0.025) mm thick
• Orientation: <100> +/-0.5°
• Polishing: One side polished
• Packing: Sealed in nitrogen in a single wafer container at 100 class clean room

Properties:

• Growth method: LEC (Liquid Encapsulated Czochralski)
• Carrier Concentration (@77 K): (0.19-0.50)E18/cc
• Resistivities (ohm-cm): 0.0005-0.001
• Mobility (cm^2/Vs) (@77K): (3.58-5.60)E+4
• EPD (/cm^2): < 200

Practical Applications and Benefits

This high-quality InSb wafer is designed for a wide range of applications, including infrared detectors, photovoltaic devices, and optoelectronic sensors. Its N-type conductivity and Te doping make it ideal for enhancing the performance of these devices. The one-side polished finish ensures a smooth surface for easy handling and processing. Additionally, the wafer's high purity and excellent properties make it a reliable choice for critical applications in the semiconductor industry. Choose our InSb wafer for superior performance and reliability in your projects.