Exclusive Deal Ge Single Crystal Wafer, N-type Undoped (111) 4"x0.5 Mm,2sp, R:40 Ohm.cm While Supplies Last [RvaIdHzi]

High-Quality N-Type Ge Single Crystal Wafers

Experience the precision and reliability of our N-Type Ge Single Crystal Wafers, designed for a wide range of semiconductor applications. These wafers are crafted using the Czochralski (CZ) method, ensuring the highest level of purity and quality. With their (111) orientation and 4" diameter, these wafers are perfect for various semiconductor devices and photovoltaic applications. The surface is polished on both sides, providing a smooth and uniform finish. Our wafers are undoped, offering excellent electrical properties and compatibility with different semiconductor processes.

• Optimized for Semiconductor Applications
• High Purity and Quality

Key Specifications and Features

Our Ge Single Crystal Wafers are designed with meticulous attention to detail. The wafers are 500 microns thick with a surface roughness of less than 30 A, as measured by atomic force microscopy (AFM). The resistivity of these wafers is greater than 40 ohm.cm, ensuring excellent electrical conductivity. These wafers are also packaged in a 1000 class clean room environment, guaranteeing a high level of cleanliness and protection.

• Excellent Surface Quality
• High Resistivity and Conductivity
• 1000 Class Clean Room Packaging

Applications and Benefits

These N-Type Ge Single Crystal Wafers are versatile and can be used in various applications, including solar cells, infrared detectors, and optoelectronic devices. Their superior quality and performance make them an ideal choice for researchers and manufacturers in the semiconductor industry. By choosing our Ge wafers, you are investing in a product that offers exceptional reliability and precision.

• Wide Range of Applications
• Superior Quality and Performance
• Perfect for Research and Manufacturing