User-friendly Sic - 4h On Axis <0001>+/- 0.5 Degree 4" Dia. X0.35 Mm Thick. Semi-insulating Two Sides Polished (si Side Epi- Polished)-1 Gadget [lvwHt7WL]

High-Precision SiC Substrate

This product offers a premium SiC (4H on axis <0001>+/- 0.5 degree) substrate, meticulously crafted for high-precision applications. With a diameter of 4 inches and a thickness of 0.35 mm, it is designed to meet the stringent requirements of advanced semiconductor manufacturing. The substrate features two sides polished, providing a smooth and even surface for device fabrication. Its semi-insulating properties make it ideal for various electronic devices, ensuring optimal performance and reliability.

Key Specifications and Features

This SiC substrate is oriented on axis <0001>+/- 0.5 degree, ensuring consistent and reliable performance. The precise dimensions of 4 inches diameter and 0.35 mm thickness are crucial for achieving accurate device fabrication. Both sides of the substrate are EPI-polished, resulting in a surface roughness of < 10 A by AFM. This exceptional finish minimizes defects and enhances device performance. Additionally, the substrate boasts a resistivity of >1E5 ohm-cm, making it suitable for a wide range of applications, including power electronics and high-frequency devices.

Typical Properties and Applications

The single crystal SiC substrate exhibits several remarkable properties. With a formula weight of 40.10, it forms a hexagonal unit cell with lattice constants of a = 3.07 A and c = 10.53 A. The stacking sequence of ABCB (4H) and orientation of (0001) contribute to its exceptional structural integrity. The substrate is polished on the silicon face using EPI polishing, resulting in a band gap of 3.26eV (indirect). Its semi-insulating nature and high resistivity make it ideal for power electronics and high-frequency devices. The substrate also features a low micropipe density of <=15 cm^-2, ensuring device reliability. With a dielectric constant of e (11) = e (22) = 9.66 and e (33) = 10.33, it offers excellent electrical insulation properties. The hardness of 9 Mohs and Ra <= 1nm surface finish further enhance its durability and precision. This versatile substrate is suitable for a wide range of applications, including power devices, high-frequency devices, and optoelectronic devices.