Fast Delivery Vgf-ge Wafer(100) . 100 Mmdia X 0.175 Mm, 2sp, P Type ( Ga Doped) R:0.1-0.182 Ohm.cm Christmas Gift Special [4RkwzYtC]

VGF-Ge Wafer(100) with P-Type Doping

The VGF-Ge Wafer(100) is a high-quality semiconductor material designed for precision applications in the electronics industry. Engineered with P-type doping, this wafer offers enhanced electrical properties and is ideal for a variety of semiconductor devices. Its superior quality and precise specifications make it a preferred choice for manufacturers seeking reliable and efficient semiconductor solutions.

Ge Wafer Specification and Key Features

This Ge wafer boasts an orientation of (100) +/-0.5 Deg., ensuring consistent performance across different devices. With a wafer size of 100(+/_0.4) mm diameter and a thickness of 175(+/_25) microns, it provides ample surface area for various applications. Both sides are polished, ensuring a smooth and uniform surface finish. Key features include a surface roughness of < 8 A (by AFM), making it suitable for high-precision applications. The wafer is Ga-doped and features a P-type conductor type, with a resistivity range of 0.51-0.182 ohm.cm. This ensures excellent electrical conductivity and reliable performance.

Applications and Benefits

The VGF-Ge Wafer(100) is versatile and finds wide application in the semiconductor industry. Its precise specifications and high-quality properties make it ideal for use in various devices, including solar cells, photodiodes, and infrared detectors. The wafer's excellent electrical conductivity and low surface roughness contribute to its reliability and efficiency. By choosing this wafer, manufacturers can benefit from improved device performance, reduced production costs, and enhanced product quality. Whether for research and development or mass production, this wafer is a valuable asset for any semiconductor project.