Expertly Crafted Inp-vgf Grown (111)a Fe Doped, 2"x0.35 Mm Wafer, 2sp, Semi-insulating Fast Dispatch [QEazlSDt]

InP-VGF Grown (111)A Fe Doped Wafers

Discover the superior quality of our InP-VGF Grown (111)A Fe doped wafers, designed to meet the highest standards of semiconductor technology. These wafers are crafted with precision and are ideal for a wide range of applications in the semiconductor industry. With their exceptional properties and reliable performance, they are a preferred choice for manufacturers seeking top-notch materials.

Key Features and Specifications

Our InP-VGF Grown (111)A Fe doped wafers are characterized by their exceptional properties, including a resistivity range of (0.61-3.25)E7 ohm.cm and a mobility of 2090-2470 cm^2/v.s. These specifications make them suitable for high-speed and high-frequency devices. The wafer size is 2" diameter x 0.35mm, ensuring compatibility with various semiconductor processes. Additionally, the semi-insulating nature of these wafers provides excellent electrical isolation, making them ideal for sensitive applications.

Applications and Benefits

Our InP-VGF Grown (111)A Fe doped wafers are versatile and can be used in a variety of applications, including optical communication, high-speed transistors, and microwave devices. The semi-insulating nature of these wafers allows for reduced power consumption and improved device performance. The two sides polished finish ensures a smooth surface, which is crucial for achieving high-quality device fabrication. With our EPI ready surface and packing, you can expect a seamless integration into your manufacturing process. Choose our InP-VGF Grown (111)A Fe doped wafers for superior performance and reliability.