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Free Shipping Gaas, Growing Method: Vgf (111)b, Si-doped, 2" Dia X 0.35mm, 2sp - Gasicb50d035c2us Deal Alert: 55% Off [5D2A3RuM]
GaAs single crystal wafer Growing Method: VGF Orientation: (111)BPrimary Flat: EJ(0-11)+/- 0.5 deg; Secondary Flat: EJ(-211) Size: 2" dia x 0.35mm Polishing: Two sides polished Doping: Si-doped Conductor type: S-C-NResistivity:(1.5-4.1)E-3 ohm.cm Ca
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Free Shipping Gaas, Growing Method: Vgf (111)b, Si-doped, 2" Dia X 0.35mm, 2sp - Gasicb50d035c2us Deal Alert: 55% Off [5D2A3RuM]
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GaAs single crystal wafer Primary Flat: EJ(0-11)+/- 0.5 deg; Secondary Flat: EJ(-211) Resistivity:(1.5-4.1)E-3 ohm.cm Ra(Average Roughness) : < 0.4 nm Note: EPI ready wafers |
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