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SEMI PV13 - Test Method for Excess-Charge-Carrier Recombination Lifetime Measurement

The SEMI PV13 standard is a comprehensive test method designed to measure the excess-charge-carrier recombination lifetime in silicon wafers, ingots, and bricks. This critical parameter is essential for optimizing solar cell design, production, and process control. The SEMI PV13 provides a reliable and precise method for assessing the recombination lifetime, which directly impacts the efficiency and performance of solar cells. With its advanced eddy-current sensor technology and quasi-steady-state photoconductance (QSSPC) techniques, the SEMI PV13 is a game-changer in the solar industry.

Key Product Properties and Specifications

The SEMI PV13 standard is applicable to a wide range of silicon specimens, including wafers, ingots, and bricks, with carrier recombination lifetimes ranging from 0.1 to 15,000 µs. The measurement is conducted over an extensive excess-carrier density range, from 1 × 10¹³ cm⁻³ to 2 × 10¹⁶ cm⁻³ for wafer specimens and 1 × 10¹³ cm⁻³ to 5 × 10¹⁵ cm⁻³ for bulk specimens. The method is suitable for specimens with resistivity ranging from 0.1 Ω∙cm to 10000 Ω∙cm. This versatility makes the SEMI PV13 a valuable tool for various applications in the solar cell industry.

Practical Applications and Benefits

The SEMI PV13 standard is an indispensable resource for solar cell manufacturers and researchers. By accurately measuring the excess-charge-carrier recombination lifetime, the SEMI PV13 enables design optimization and efficiency prediction, leading to improved solar cell performance. The standard's detailed description of measurement techniques, including QSSPC and transient methods, ensures consistent and reliable results. Whether you are a solar cell designer, producer, or researcher, the SEMI PV13 is your go-to solution for measuring excess-charge-carrier recombination lifetime and enhancing the performance of your solar cells.