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SEMI 3D21 - Glass-Based Material Guide for 3DS-IC

The SEMI 3D21 - Guide for Describing Glass-Based Material for Use in 3DS-IC Process is a comprehensive document designed to bridge the gap in information about non-silicon, dielectric materials used in the semiconductor and 3DS-IC packaging industry. This guide serves as a foundational reference for more specific specifications, offering a detailed overview of glass as a base material for semiconductor applications. Key features include its applicability as carrier wafers, spacers, interposers, MEMS, RF devices, and lenses.

Product Specifications and Technical Details

The guide focuses on silicate-based materials in their amorphous solid form, such as silicate glass and quartz glass. It provides insights into the dimensional, physical, and thermal characteristics of glass as a base material for semiconductor applications and 3DS-IC stacks. Key specifications include the ability of glass substrates to remain in the package permanently or be removed after processing, their shape and size (wafer or panel), and the potential for metal fillings in the openings.

• Dimensional accuracy: Ensures precise alignment and performance in semiconductor devices.
• Thermal stability: Maintains structural integrity under varying temperatures.

Practical Applications and Target Audience

This guide is an invaluable resource for semiconductor professionals, offering a detailed description of glass-based materials that can be used in various applications within the industry. Whether it's for high-performance MEMS, RF devices, or advanced packaging techniques, the SEMI 3D21 guide provides the necessary information to make informed decisions. Target audience includes engineers, researchers, and manufacturers in the semiconductor and 3DS-IC packaging sectors. The guide empowers users to optimize their processes and achieve better results in the development of next-generation semiconductor devices.

• Improved process efficiency: Facilitates smoother production and reduced downtime.
• Increased device performance: Enhances the capabilities of semiconductor devices.