Seasonal Pick Mse Pro 6 Inch Ge Germanium Single Crystal Wafers Collection [ClrNMgIs]

MSE PRO™ 6 Inch Ge Germanium Single Crystal Wafers

Introducing the MSE PRO™ 6 Inch Ge Germanium Single Crystal Wafers, a premium product designed for advanced semiconductor applications. These wafers are meticulously crafted using the Czochralski method, ensuring the highest level of purity and quality. With their M3 crystal structure and a unit cell constant of a=5.65754 Å, these wafers offer exceptional performance and reliability.

• High purity Germanium for superior performance
• Expertly grown using the Czochralski method
• Perfect for advanced semiconductor applications

Key Features and Specifications

The MSE PRO™ 6 Inch Ge Germanium Single Crystal Wafers are renowned for their exceptional features and specifications. With a density of 5.323 g/cm3 and a melt point of 937.4 °C, these wafers are highly durable and suitable for various high-temperature applications. They are Ga-doped and of the P type, offering a resistivity range of 5~50 mOhm-cm. The EPD is less than 5000 /cm2, ensuring minimal leakage current.

• High density and melt point for robust performance
• Ga-doped P type for precise control
• Low EPD for reduced leakage current

Applications and Benefits

The MSE PRO™ 6 Inch Ge Germanium Single Crystal Wafers are versatile and widely used in various industries, including aerospace, defense, and telecommunications. Their superior quality and precision make them ideal for high-performance applications. The size of dia 6" (150mm) and thickness of 225um +/- 25um ensure compatibility with a wide range of devices. With options for single or double side polishing and crystal orientation (100) +/- 6deg off toward <111>, these wafers offer unmatched flexibility and efficiency.

• Wide range of applications in aerospace, defense, and telecommunications
• High precision and compatibility with various devices
• Flexible options for polishing and crystal orientation