Believe It Mse Pro 5 X 10 Mm Non-polar Undoped N-type Gallium Nitride Gan Single Crystal Accessory [79mv6kfh]

MSE PRO Non-Polar GaN Single Crystal

Introducing the MSE PRO Non-Polar GaN Single Crystal, a cutting-edge material designed for high-performance electronic applications. This N-Type, undoped GaN crystal offers exceptional conductivity and structural integrity, making it ideal for a wide range of applications in the semiconductor industry. Its non-polar nature further enhances its performance, providing superior stability and reliability.

Key Product Features

The MSE PRO Non-Polar GaN Single Crystal boasts several key features that set it apart from other materials. With dimensions of 5.0 mm x 10 mm and a thickness of 350 +/- 25 um, it offers a large usable area of over 90%. The crystal is polished to an extremely fine Ra < 0.5 nm on the front surface, ensuring optimal performance and compatibility with epitaxial growth processes. Additionally, the back surface is finely ground for added durability. Here are some of the key specifications:

Conductivity Type: N-Type (undoped)

Orientation: Other Non-polar planes

Resistivity: < 0.5 Ohm-cm at 300K

Carrier Concentration: 1e17 cm^-3

Mobility: 500 cm²/(V*s)

Dislocation Density: < 5x10⁵ cm^-2

Applications and Benefits

The MSE PRO Non-Polar GaN Single Crystal is an essential component for various applications in the semiconductor industry. Its superior conductivity, structural integrity, and non-polar nature make it ideal for use in high-frequency devices, power electronics, and optoelectronic devices. By incorporating this crystal into your projects, you can expect improved performance, increased efficiency, and reduced power consumption. Whether you are a researcher, engineer, or hobbyist, the MSE PRO Non-Polar GaN Single Crystal is a valuable addition to your materials collection.