5-star Rated 6 Inch High Purity (undoped) Silicon Carbide Wafers Semi-insulating Sic Substrates (hpsi) Get Yours Today [RU8sm2Qh]

High Purity Silicon Carbide Wafers: Semi-Insulating SiC Substrates

Are you in search of high-quality semiconductor substrates for your advanced electronic applications? Look no further! MSE Supplies offers 6-inch High Purity (Undoped) Silicon Carbide Wafers, also known as Semi-Insulating SiC Substrates (HPSI), designed to meet the stringent requirements of modern semiconductor technology. These wafers are crafted with precision, ensuring exceptional purity and reliability for your critical applications.

• Enhanced Performance: With a production grade and dummy grade available, our HPSI substrates provide the perfect balance between performance and cost.
• Unmatched Quality: Our 4H-SiC single crystals boast superior lattice parameters, a high Mohs hardness, and excellent thermal conductivity, making them ideal for high-temperature and high-power semiconductor devices.

Key Specifications and Features

The specifications of our 6-inch High Purity (Undoped) Silicon Carbide Wafers are designed to deliver the highest level of performance and reliability. Here are some of the key features:

• Diameter: 150.0 mm +/- 0.2 mm
• Thickness: 500 um +/- 25 um
• Wafer Orientation: On axis: <0001> +/- 0.25 deg
• Electrical Resistivity: ≥ 1E8 ohm cm
• Dopant: Undoped

Our wafers are available in both production grade and dummy grade, catering to various application needs. The production grade features a low micropipe density and high electrical resistivity, while the dummy grade offers a cost-effective solution with a higher micropipe density.

Applications and Benefits

The 6-inch High Purity (Undoped) Silicon Carbide Wafers find extensive use in various high-performance electronic devices, including power electronics, RF devices, and high-temperature sensors. By choosing our HPSI substrates, you can expect several benefits:

• Improved Device Performance: The high thermal conductivity and low thermal expansion coefficient of SiC substrates enable better thermal management and improved device reliability.
• Cost-Effective Solutions: Our competitive pricing ensures that you get the best value for your investment, without compromising on quality.
• Customization: We offer customization services to meet your specific requirements and specifications, ensuring that our HPSI substrates are tailored to your application needs.